EPC2102
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2102 EPC
Description: MOSFET 2N-CH 60V 23A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V, Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Part Status: Active.
Weitere Produktangebote EPC2102 nach Preis ab 10.46 EUR bis 18.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
EPC2102 | EPC |
Description: MOSFET 2N-CH 60V 23A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2102 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.39 EUR |
| 10+ | 12.67 EUR |
| 100+ | 10.46 EUR |