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EPC2106

EPC2106

EPC2106_datasheet.pdf
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 92500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.52 EUR
5000+1.43 EUR
7500+1.39 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2106 EPC

Description: MOSFET 2N-CH 100V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die, Part Status: Active.

Weitere Produktangebote EPC2106 nach Preis ab 1.45 EUR bis 5.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2106 EPC2106 EPC EPC2106_datasheet.pdf Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 94914 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.82 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106 EPC EPC2106_datasheet.pdf GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.11 EUR
10+3.31 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.71 EUR
2500+1.52 EUR
5000+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
Description: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 94914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.82 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106 EPC2106_datasheet.pdf
EPC2106
Hersteller: EPC
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.11 EUR
10+3.31 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.71 EUR
2500+1.52 EUR
5000+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH