EPC2106ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Technische Details EPC2106ENGRT EPC
Description: GANFET 2N-CH 100V 1.7A DIE, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Drain to Source Voltage (Vdss): 100V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
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EPC2106ENGRT | Hersteller : EPC |
Description: GANFET 2N-CH 100V 1.7A DIE Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Current - Continuous Drain (Id) @ 25°C: 1.7A Drain to Source Voltage (Vdss): 100V Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) |
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