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EPC2202

EPC2202


EPC2202_datasheet.pdf
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 32500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.96 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2202 EPC

Description: GANFET N-CH 80V 18A DIE, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): +5.75V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5.

Weitere Produktangebote EPC2202 nach Preis ab 2.4 EUR bis 5.86 EUR

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EPC2202 EPC2202 Hersteller : EPC EPC2202_datasheet.pdf Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 34345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.84 EUR
100+2.69 EUR
500+2.4 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH