EPC2202
Hersteller: EPC
Description: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
| Anzahl | Preis |
|---|---|
| 2500+ | 1.96 EUR |
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Technische Details EPC2202 EPC
Description: GANFET N-CH 80V 18A DIE, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): +5.75V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5.
Weitere Produktangebote EPC2202 nach Preis ab 2.4 EUR bis 5.86 EUR
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EPC2202 | Hersteller : EPC |
Description: GANFET N-CH 80V 18A DIEQualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 3mA Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): +5.75V, -4V Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 |
auf Bestellung 34345 Stücke: Lieferzeit 10-14 Tag (e) |
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