EPC2204A
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
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Technische Details EPC2204A EPC
Description: TRANS GAN 80V .006OHM AECQ101, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 4mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote EPC2204A nach Preis ab 2.28 EUR bis 7.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EPC2204A | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 2137 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 26990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2204A |
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Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.57 EUR |
| 2500+ | 2.28 EUR |
| EPC2204A |
![]() |
Hersteller: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 4.64 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.67 EUR |


