EPC2207
Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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Technische Details EPC2207 EPC
Description: TRANS GAN 200V DIE .022OHM, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote EPC2207 nach Preis ab 1.87 EUR bis 6.15 EUR
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHM Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 18922 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2207 | EPC |
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0 |
auf Bestellung 8997 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2207 |
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Hersteller: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 18922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.14 EUR |
| 10+ | 3.99 EUR |
| 50+ | 3.07 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.25 EUR |
| EPC2207 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
auf Bestellung 8997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.15 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.24 EUR |
| 2500+ | 1.89 EUR |
| 5000+ | 1.87 EUR |