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EPC2218A


EPC2218A_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.5 EUR
2000+4.36 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2218A EPC

Description: TRANS GAN 80V .0032OHM AECQ101, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote EPC2218A nach Preis ab 4.61 EUR bis 11.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21758 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.83 EUR
10+7.94 EUR
100+5.74 EUR
500+5.34 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218A EPC2218A EPC EPC2218A_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.98 EUR
10+8.04 EUR
100+5.82 EUR
500+5.4 EUR
1000+4.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218A EPC2218A_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.83 EUR
10+7.94 EUR
100+5.74 EUR
500+5.34 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218A EPC2218A_datasheet.pdf
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+11.98 EUR
10+8.04 EUR
100+5.82 EUR
500+5.4 EUR
1000+4.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH