EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Technische Details EPC2219 EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V, Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V, Drain to Source Voltage (Vdss): 65 V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Weitere Produktangebote EPC2219 nach Preis ab 1.19 EUR bis 2.7 EUR
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EPC2219 | EPC |
Description: TRANS GAN 65V AECQ101 3.3OHM DIE Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V Drain to Source Voltage (Vdss): 65 V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 100µA Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) |
auf Bestellung 7999 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2219 |
|
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.19 EUR |