EPC2219
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.12 EUR |
| 5000+ | 1.07 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2219 EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V.
Weitere Produktangebote EPC2219 nach Preis ab 1.19 EUR bis 2.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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EPC2219 | EPC |
Description: TRANS GAN 65V AECQ101 3.3OHM DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V |
auf Bestellung 7999 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2219 |
|
Hersteller: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
auf Bestellung 7999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.19 EUR |