EPC2302
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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Technische Details EPC2302 EPC
Description: TRANS GAN 100V DIE .0018OHM, Packaging: Tape & Reel (TR), Package / Case: 7-PowerWQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Ta), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 14mA, Supplier Device Package: 7-QFN (3x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote EPC2302 nach Preis ab 6.5 EUR bis 16.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EPC2302 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN |
auf Bestellung 1097 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2302 | EPC |
Description: TRANS GAN 100V DIE .0018OHM Packaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 82527 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2302 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.46 EUR |
| 10+ | 10.52 EUR |
| 100+ | 7.71 EUR |
| 500+ | 7.58 EUR |
| 1000+ | 6.95 EUR |
| 3000+ | 6.5 EUR |
| EPC2302 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 82527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.65 EUR |
| 10+ | 11.32 EUR |
| 50+ | 9.04 EUR |
| 100+ | 8.31 EUR |
| 500+ | 8.16 EUR |