EPC2304ENGRT
Hersteller: EPCDescription: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
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Technische Details EPC2304ENGRT EPC
Description: TRANS GAN 200V .005OHM 3X5PQFN, Packaging: Tape & Reel (TR), Package / Case: 7-PowerWQFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 8mA, Supplier Device Package: 7-QFN (3x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V.
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EPC2304ENGRT | Hersteller : EPC |
Description: TRANS GAN 200V .005OHM 3X5PQFN Packaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Supplier Device Package: 7-QFN (3x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V |
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