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EPC2361


EPC2361_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+6.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2361 EPC

Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ, Packaging: Tape & Reel (TR), Package / Case: 7-PowerWQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Ta), Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 15mA, Supplier Device Package: 7-QFN (3x5), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V.

Weitere Produktangebote EPC2361 nach Preis ab 6.97 EUR bis 16.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2361 EPC2361 EPC EPC2361_datasheet.pdf Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54237 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.34 EUR
10+11.16 EUR
100+8.22 EUR
500+8.18 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361 EPC EPC2361_datasheet.pdf GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 7539 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.4 EUR
10+11.21 EUR
100+8.27 EUR
500+8.21 EUR
1000+7.19 EUR
3000+6.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361_datasheet.pdf
Hersteller: EPC
Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.34 EUR
10+11.16 EUR
100+8.22 EUR
500+8.18 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361 EPC2361_datasheet.pdf
Hersteller: EPC
GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 7539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+16.4 EUR
10+11.21 EUR
100+8.27 EUR
500+8.21 EUR
1000+7.19 EUR
3000+6.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH