EPC2367
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
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Technische Details EPC2367 EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI, Packaging: Tape & Reel (TR), Package / Case: 5-PowerWQFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tj), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 10mA, Supplier Device Package: 5-QFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V.
Weitere Produktangebote EPC2367 nach Preis ab 5.28 EUR bis 13.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EPC2367 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN |
auf Bestellung 5528 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2367 | EPC |
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI Packaging: Cut Tape (CT) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 5-QFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V |
auf Bestellung 36191 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2367 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.28 EUR |
| 10+ | 8.96 EUR |
| 100+ | 6.51 EUR |
| 500+ | 6.22 EUR |
| 1000+ | 5.43 EUR |
| 3000+ | 5.28 EUR |
| EPC2367 |
|
Hersteller: EPC
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
Description: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 36191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.28 EUR |
| 10+ | 8.96 EUR |
| 100+ | 6.52 EUR |
| 500+ | 6.2 EUR |