EPC8002
Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
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Technische Details EPC8002 EPC
Description: GANFET N-CH 65V 2A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 65 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V.
Weitere Produktangebote EPC8002 nach Preis ab 3.34 EUR bis 8.35 EUR
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EPC8002 | EPC |
Description: GANFET N-CH 65V 2A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V |
auf Bestellung 40111 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC8002 |
|
Hersteller: EPC
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
Description: GANFET N-CH 65V 2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
auf Bestellung 40111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.35 EUR |
| 10+ | 5.52 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.34 EUR |