ER1JF_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE GEN PURP 600V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Technische Details ER1JF_R1_00001 Panjit International Inc.
Description: DIODE GEN PURP 600V 1A SMBF, Packaging: Tape & Reel (TR), Package / Case: DO-221AA, SMB Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMBF, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
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ER1JF_R1_00001 | Hersteller : Panjit International Inc. |
Description: DIODE GEN PURP 600V 1A SMBF Packaging: Cut Tape (CT) Package / Case: DO-221AA, SMB Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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