ES15JLW Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
| Anzahl | Preis |
|---|---|
| 10000+ | 0.13 EUR |
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Technische Details ES15JLW Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W, Supplier Device Package: SOD-123W, Current - Average Rectified (Io): 1.5A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C.
Weitere Produktangebote ES15JLW nach Preis ab 0.15 EUR bis 0.56 EUR
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ES15JLW | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A SOD123WCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
auf Bestellung 27187 Stücke: Lieferzeit 10-14 Tag (e) |
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