ES15JLW Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Produktrezensionen
Produktbewertung abgeben
Technische Details ES15JLW Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W, Supplier Device Package: SOD-123W, Current - Average Rectified (Io): 1.5A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C.
Weitere Produktangebote ES15JLW nach Preis ab 0.18 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ES15JLW | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A SOD123W Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
auf Bestellung 27187 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ES15JLW |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1.5A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
auf Bestellung 27187 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |