
ES1DHE3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7500+ | 0.13 EUR |
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Technische Details ES1DHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ES1DHE3_A/I nach Preis ab 0.14 EUR bis 0.56 EUR
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ES1DHE3_A/I | Hersteller : Vishay |
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auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1DHE3_A/I | Hersteller : Vishay |
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auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1DHE3_A/I | Hersteller : Vishay |
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auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1DHE3_A/I | Hersteller : Vishay |
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auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1DHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 22072 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1DHE3_A/I | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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ES1DHE3_A/I | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 0.1mA Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ES1DHE3_A/I | Hersteller : Vishay General Semiconductor |
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Produkt ist nicht verfügbar |
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ES1DHE3_A/I | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 0.1mA Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
Produkt ist nicht verfügbar |