ES1GAL Taiwan Semiconductor
auf Bestellung 28000 Stücke:
Lieferzeit 66-70 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| 14000+ | 0.14 EUR |
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Technische Details ES1GAL Taiwan Semiconductor
Description: DIODE GEN PURP 400V 1A THIN SMA, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 16pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Thin SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Weitere Produktangebote ES1GAL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ES1GAL | Hersteller : Taiwan Semiconductor |
 Diode Switching 400V 1A 2-Pin Thin SMA |
Produkt ist nicht verfügbar |
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ES1GAL | Hersteller : Taiwan Semiconductor |
Diode Switching 400V 1A 2-Pin Thin SMA T/R |
Produkt ist nicht verfügbar |
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ES1GAL | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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ES1GAL | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |