Technische Details ES1J R2 Taiwan Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 1A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; superfast switching, Case: SMA, Max. forward voltage: 1.7V, Max. forward impulse current: 30A, Kind of package: reel; tape, Leakage current: 0.15mA.
Weitere Produktangebote ES1J R2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
ES1J_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.15mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ES1J R2 | Taiwan Semiconductor | Diode Switching 600V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ES1J_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES1J R2 |
Hersteller: Taiwan Semiconductor
Diode Switching 600V 1A 2-Pin SMA T/R
Diode Switching 600V 1A 2-Pin SMA T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH