ES1K Yangzhou Yangjie Electronic Technology Co.,Ltd
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details ES1K Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 1A DO214AC, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 10pF @ 1V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
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ES1K | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 1A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 1V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
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