ES2B-M3/52T Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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Technische Details ES2B-M3/52T Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
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Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Features of semiconductor devices: glass passivated; ultrafast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 18pF Reverse recovery time: 50ns Leakage current: 0.35mA Max. forward voltage: 0.9V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 0.1kV Kind of package: 7 inch reel Quantity in set/package: 750pcs. |
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