Produkte > YANGJIE TECHNOLOGY > ES2K
ES2K

ES2K YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB752F1ED883F989FB93692A18&compId=ES2A_SER.pdf?ci_sign=abbd019c05226827774060b6fa3130b4c28dbe23 Hersteller: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; 35ns; SMB; Ufmax: 1.85V; Ifsm: 50A
Case: SMB
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.85V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 225 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
225+0.31 EUR
245+0.29 EUR
500+0.14 EUR
665+0.11 EUR
3000+0.064 EUR
Mindestbestellmenge: 225
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details ES2K YANGJIE TECHNOLOGY

Description: DIODE GEN PURP 800V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.

Weitere Produktangebote ES2K nach Preis ab 0.31 EUR bis 0.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ES2K ES2K Hersteller : YANGJIE TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB752F1ED883F989FB93692A18&compId=ES2A_SER.pdf?ci_sign=abbd019c05226827774060b6fa3130b4c28dbe23 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; 35ns; SMB; Ufmax: 1.85V; Ifsm: 50A
Case: SMB
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.85V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Mounting: SMD
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
225+0.31 EUR
Mindestbestellmenge: 225
Im Einkaufswagen  Stück im Wert von  UAH
ES2K ES2K Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd ES2A%20THRU%20ES2K.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2K ES2K Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd ES2A%20THRU%20ES2K.pdf Description: DIODE GEN PURP 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH