ES6U1T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.27 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
8000 Stücke
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Technische Details ES6U1T2R Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-WEMT, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V.
Weitere Produktangebote ES6U1T2R nach Preis ab 0.33 EUR bis 1.34 EUR
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ES6U1T2R | Rohm Semiconductor |
Description: MOSFET P-CH 12V 1.3A 6WEMT Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V |
auf Bestellung 8330 Stücke: Lieferzeit 10-14 Tag (e) |
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| ES6U1T2R |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Description: MOSFET P-CH 12V 1.3A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
auf Bestellung 8330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.34 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.33 EUR |