ES6U2T2R ROHM Semiconductor

Description: MOSFET N-CH 20V 1.5A 6WEMT, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 700mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 6-WEMT.