ESD110B102ELSE6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TVS DIODE 18.5VWM 17VC PGTSSLP24
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
auf Bestellung 1272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1272+ | 0.17 EUR |
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Technische Details ESD110B102ELSE6327XTSA1 Infineon Technologies
Description: TVS DIODE 18.5VWM 17VC PGTSSLP24, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -40°C ~ 85°C (TA), Applications: RF Antenna, Capacitance @ Frequency: 0.3pF @ 1MHz, Current - Peak Pulse (10/1000µs): 2A (8/20µs), Voltage - Reverse Standoff (Typ): 18.5V (Max), Supplier Device Package: PG-TSSLP-2-4, Bidirectional Channels: 1, Voltage - Breakdown (Min): 20V, Voltage - Clamping (Max) @ Ipp: 17V (Typ), Power Line Protection: No.
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ESD110B102ELSE6327XTSA1 | Hersteller : Infineon Technologies |
Description: TVS DIODE 18.5VWM 17VC PGTSSLP24 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power Line Protection: No |
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