ESDB12C

ESDB12C Diotec Semiconductor


Hersteller: Diotec Semiconductor
ESD Suppressors / TVS Diodes ESD Diode, SOT-23, 150C, 200W, Bidir
auf Bestellung 6000 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
72+0.73 EUR
103+ 0.51 EUR
122+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.3 EUR
3000+ 0.22 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 72
Produktrezensionen
Produktbewertung abgeben

Technische Details ESDB12C Diotec Semiconductor

Category: Transil diodes - arrays, Description: Diode: TVS array; 14.2÷16.7V; 5A; 200W; bidirectional,double, Type of diode: TVS array, Mounting: SMD, Case: SOT23, Kind of package: reel; tape, Semiconductor structure: bidirectional; double, Max. forward impulse current: 5A, Breakdown voltage: 14.2...16.7V, Leakage current: 50nA, Features of semiconductor devices: ESD protection, Peak pulse power dissipation: 0.2kW, Capacitance: 19pF, Max. off-state voltage: 12V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote ESDB12C

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ESDB12C Hersteller : Diotec Semiconductor esdb3v3c.pdf ESD Protection Diodes in SMDESD SOT-23 150°C 200W Bidir
Produkt ist nicht verfügbar
ESDB12C ESDB12C Hersteller : DIOTEC SEMICONDUCTOR esdb3v3c.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 14.2÷16.7V; 5A; 200W; bidirectional,double
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: bidirectional; double
Max. forward impulse current: 5A
Breakdown voltage: 14.2...16.7V
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2kW
Capacitance: 19pF
Max. off-state voltage: 12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ESDB12C ESDB12C Hersteller : DIOTEC SEMICONDUCTOR esdb3v3c.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 14.2÷16.7V; 5A; 200W; bidirectional,double
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: bidirectional; double
Max. forward impulse current: 5A
Breakdown voltage: 14.2...16.7V
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2kW
Capacitance: 19pF
Max. off-state voltage: 12V
Produkt ist nicht verfügbar