ESH2B-E3/5BT Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 22400+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ESH2B-E3/5BT Vishay General Semiconductor
Description: DIODE GEN PURP 100V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Weitere Produktangebote ESH2B-E3/5BT nach Preis ab 0.26 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ESH2B-E3/5BT | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
auf Bestellung 2150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
ESH2B-E3/5BT | Vishay Semiconductors |
Rectifiers 100 Volt 2.0A 25ns Glass Passivated |
auf Bestellung 4765 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ESH2B-E3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| ESH2B-E3/5BT |
|
Hersteller: Vishay Semiconductors
Rectifiers 100 Volt 2.0A 25ns Glass Passivated
Rectifiers 100 Volt 2.0A 25ns Glass Passivated
auf Bestellung 4765 Stücke:
Lieferzeit 10-14 Tag (e)