ESH2DFSH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |
| 5000+ | 0.21 EUR |
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Technische Details ESH2DFSH Taiwan Semiconductor Corporation
Description: 25NS, 2A, 200V, ULTRA FAST RECOV, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-128, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-128, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 27pF @ 4V, 1MHz.
Weitere Produktangebote ESH2DFSH
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ESH2DFSH | Hersteller : Taiwan Semiconductor Corporation |
Description: 25NS, 2A, 200V, ULTRA FAST RECOV Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 27pF @ 4V, 1MHz |
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