ESH3DFSH Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.23 EUR |
| 5000+ | 0.21 EUR |
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Technische Details ESH3DFSH Taiwan Semiconductor
Description: DIODE STANDARD 200V 3A SOD128, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 42pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: SOD-128, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote ESH3DFSH nach Preis ab 0.23 EUR bis 0.84 EUR
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ESH3DFSH | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE STANDARD 200V 3A SOD128Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 13773 Stücke: Lieferzeit 10-14 Tag (e) |
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