
F1M Yangzhou Yangjie Electronic Technology Co.,Ltd

Description: DIODE GEN PURP 1KV 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
63+ | 0.28 EUR |
67+ | 0.26 EUR |
123+ | 0.14 EUR |
500+ | 0.089 EUR |
1000+ | 0.06 EUR |
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Technische Details F1M Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 1A SOD123FL, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123FL, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
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F1M | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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