F3L200R07PE4 Infineon Technologies

Description: INSULATED GATE BIPOLAR TRANSISTO, Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 680 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 200 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONO4-1-1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Level Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.