F4100R12KS4BOSA1
Produktcode: 162575
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote F4100R12KS4BOSA1 nach Preis ab 108.93 EUR bis 194.73 EUR
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F4100R12KS4BOSA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 130A 660W 26-Pin ECONO3-4 Tray |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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F4100R12KS4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 130A 660W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 660 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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F4100R12KS4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 130A 660W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 660 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| F4100R12KS4BOSA1 |
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Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 130A 660W 26-Pin ECONO3-4 Tray
Trans IGBT Module N-CH 1200V 130A 660W 26-Pin ECONO3-4 Tray
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 108.93 EUR |
| F4100R12KS4BOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 182.6 EUR |
| F4100R12KS4BOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 194.73 EUR |