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F4100R17ME4B11BPSA1 Infineon Technologies


Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+175.6 EUR
Mindestbestellmenge: 3
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Technische Details F4100R17ME4B11BPSA1 Infineon Technologies

Description: IGBT MODULE 1700V 155A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.

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F4100R17ME4B11BPSA1 F4100R17ME4B11BPSA1 Hersteller : Infineon Technologies 132333577736077infineon-f4-100r17me4_b11-ds-v03_00-en.pdffileid5546d462576f34750.pdf EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode
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F4100R17ME4B11BPSA1 Hersteller : Infineon Technologies Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Description: IGBT MODULE 1700V 155A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
F4100R17ME4B11BPSA1 F4100R17ME4B11BPSA1 Hersteller : Infineon Technologies Infineon_F4_100R17ME4_B11_DS_v03_02_EN-1731389.pdf IGBT Modules MEDIUM POWER ECONO
Produkt ist nicht verfügbar