F417MR12W1M1HPB76BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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Technische Details F417MR12W1M1HPB76BPSA1 Infineon Technologies
Description: LOW POWER EASY, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A, Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA.
Weitere Produktangebote F417MR12W1M1HPB76BPSA1 nach Preis ab 215.14 EUR bis 237.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| F417MR12W1M1HPB76BPSA1 | Infineon Technologies |
MOSFET EASY STANDARD |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| F417MR12W1M1HPB76BPSA1 |
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Hersteller: Infineon Technologies
MOSFET EASY STANDARD
MOSFET EASY STANDARD
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 237.34 EUR |
| 10+ | 222.27 EUR |
| 30+ | 215.14 EUR |