F4200R17N3E4BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 201.96 EUR |
| 10+ | 175.61 EUR |
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Technische Details F4200R17N3E4BPSA1 Infineon Technologies
Description: IGBT MOD 1700V 200A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.
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