Technische Details F423MR12W1M1B76BPSA1 Infineon Technologies
Description: MOSFET 4N-CH 1200V 45A AG-EASY1B, Vgs(th) (Max) @ Id: 5.55V @ 20mA, Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Supplier Device Package: AG-EASY1B-2.
Weitere Produktangebote F423MR12W1M1B76BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| F423MR12W1M1B76BPSA1 | Infineon Technologies |
 Description: MOSFET 4N-CH 1200V 45A AG-EASY1BVgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Supplier Device Package: AG-EASY1B-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| F423MR12W1M1B76BPSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-EASY1B-2
Description: MOSFET 4N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH