F43L50R07W2H3FB11BPSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 50A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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Technische Details F43L50R07W2H3FB11BPSA2 Infineon Technologies
Description: IGBT MODULE 650V 50A MODULE, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote F43L50R07W2H3FB11BPSA2 nach Preis ab 100.95 EUR bis 177.94 EUR
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F43L50R07W2H3FB11BPSA2 | Infineon Technologies |
Description: IGBT MODULE 650V 50A MODULE Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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F43L50R07W2H3FB11BPSA2 | Infineon Technologies |
IGBT Modules 650 V, 50 A 3-level IGBT module |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
|
| F43L50R07W2H3FB11BPSA2 |
|
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 50A MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 650V 50A MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 100.95 EUR |
| F43L50R07W2H3FB11BPSA2 |
|
Hersteller: Infineon Technologies
IGBT Modules 650 V, 50 A 3-level IGBT module
IGBT Modules 650 V, 50 A 3-level IGBT module
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 177.94 EUR |