Technische Details F445MR12W1M1B76BPSA1 Infineon Technologies
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 10mA, Supplier Device Package: AG-EASY1B-2.
Weitere Produktangebote F445MR12W1M1B76BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| F445MR12W1M1B76BPSA1 | Infineon Technologies |
 Description: MOSFET 4N-CH 1200V 25A AG-EASY1BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Supplier Device Package: AG-EASY1B-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| F445MR12W1M1B76BPSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH