F475R07W1H3B11ABOMA1 Infineon Technologies

Description: IGBT MOD 650V 37.5A 275W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 37.5 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 275 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V.