auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 106.6 EUR |
| 10+ | 99.46 EUR |
| 24+ | 95.29 EUR |
| 120+ | 90.62 EUR |
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Technische Details F475R07W1H3B11ABOMA1 Infineon Technologies
Description: IGBT MODULES, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 37.5 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 275 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V.
Weitere Produktangebote F475R07W1H3B11ABOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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F475R07W1H3B11ABOMA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 650V 37.5A 275000mW Automotive 15-Pin EASY1B-3 Tray |
Produkt ist nicht verfügbar |
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F475R07W1H3B11ABOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULES Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 37.5 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 275 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V |
Produkt ist nicht verfügbar |