FB50R07W2E3B23BOMA1 Infineon Technologies
Hersteller: Infineon Technologies
Fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode and PressFIT / NTC
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Technische Details FB50R07W2E3B23BOMA1 Infineon Technologies
Description: IGBT MODULE 650V 50A, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Single Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V, Current - Collector Cutoff (Max): 18 µA, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 50 A, IGBT Type: Trench Field Stop, Part Status: Active, Packaging: Tray.
Weitere Produktangebote FB50R07W2E3B23BOMA1 nach Preis ab 24.54 EUR bis 73.37 EUR
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FB50R07W2E3B23BOMA1 | Infineon Technologies |
Fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode and PressFIT / NTC |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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FB50R07W2E3B23BOMA1 | Infineon Technologies |
IGBT Modules 650 V, 50 A PIM IGBT module |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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FB50R07W2E3B23BOMA1 | Infineon Technologies |
Description: IGBT MODULE 650V 50A NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Single Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V Current - Collector Cutoff (Max): 18 µA Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A IGBT Type: Trench Field Stop Part Status: Active Packaging: Tray |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FB50R07W2E3B23BOMA1 |
|
Hersteller: Infineon Technologies
Fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode and PressFIT / NTC
Fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode and PressFIT / NTC
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 53.46 EUR |
| 6+ | 26.54 EUR |
| 10+ | 24.54 EUR |
| FB50R07W2E3B23BOMA1 |
|
Hersteller: Infineon Technologies
IGBT Modules 650 V, 50 A PIM IGBT module
IGBT Modules 650 V, 50 A PIM IGBT module
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 70.07 EUR |
| 10+ | 57.8 EUR |
| FB50R07W2E3B23BOMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 50A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Single Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V
Current - Collector Cutoff (Max): 18 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Part Status: Active
Packaging: Tray
Description: IGBT MODULE 650V 50A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Single Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V
Current - Collector Cutoff (Max): 18 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Part Status: Active
Packaging: Tray
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 73.37 EUR |