FCA20N60-F109 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2+ | 11.21 EUR |
| 30+ | 6.48 EUR |
| 120+ | 5.44 EUR |
| 510+ | 4.71 EUR |
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Technische Details FCA20N60-F109 onsemi
Description: MOSFET N-CH 600V 20A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCA20N60-F109 nach Preis ab 5.46 EUR bis 11.35 EUR
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FCA20N60-F109 | onsemi |
MOSFETs 600V N-CH MOSFET |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCA20N60-F109 |
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Hersteller: onsemi
MOSFETs 600V N-CH MOSFET
MOSFETs 600V N-CH MOSFET
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 11.35 EUR |
| 10+ | 6.55 EUR |
| 120+ | 5.49 EUR |
| 510+ | 5.46 EUR |