Technische Details FCA76N60N ON Semiconductor
Description: MOSFET N-CH 600V 76A TO3PN, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 543W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote FCA76N60N nach Preis ab 24.35 EUR bis 37.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCA76N60N | onsemi |
 Description: MOSFET N-CH 600V 76A TO3PNSupplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 1348 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FCA76N60N |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO3PN
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 76A TO3PN
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 1348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.37 EUR |
| 30+ | 24.75 EUR |
| 120+ | 24.35 EUR |