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FCA76N60N

FCA76N60N onsemi

fca76n60n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
auf Bestellung 1348 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+46.83 EUR
30+ 38.82 EUR
120+ 36.39 EUR
510+ 31.05 EUR
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Technische Details FCA76N60N onsemi

Description: MOSFET N-CH 600V 76A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V.

Weitere Produktangebote FCA76N60N nach Preis ab 31.43 EUR bis 47.16 EUR

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FCA76N60N FCA76N60N Hersteller : onsemi / Fairchild FCA76N60N_D-2311516.pdf MOSFET SUPREMOS 76A IN TO3P
auf Bestellung 22 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+47.16 EUR
10+ 45.42 EUR
50+ 40.98 EUR
100+ 38.77 EUR
250+ 34.22 EUR
450+ 31.93 EUR
900+ 31.43 EUR
Mindestbestellmenge: 2
FCA76N60N FCA76N60N Hersteller : ON Semiconductor fca76n60n.pdf Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FCA76N60N FCA76N60N Hersteller : onsemi fca76n60n-d.pdf Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Produkt ist nicht verfügbar