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FCB11N60FTM

FCB11N60FTM onsemi

FCB11N60F.pdf
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details FCB11N60FTM onsemi

Description: MOSFET N-CH 600V 11A D2PAK, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.

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FCB11N60FTM FCB11N60FTM onsemi FCB11N60F.pdf Description: MOSFET N-CH 600V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB11N60FTM FCB11N60FTM onsemi / Fairchild fairchild_semiconductor_fcb11n60-1191130.pdf MOSFET 600V N-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB11N60FTM FCB11N60F.pdf
FCB11N60FTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB11N60FTM fairchild_semiconductor_fcb11n60-1191130.pdf
FCB11N60FTM
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH