FCH47N60-F133 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 30+ | 11.39 EUR |
| 120+ | 10.52 EUR |
| 510+ | 10.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCH47N60-F133 ON Semiconductor
Description: ONSEMI - FCH47N60-F133 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.058 ohm, TO-247AB, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 47A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 417W, Bauform - Transistor: TO-247AB, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.058ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote FCH47N60-F133 nach Preis ab 9.81 EUR bis 25.24 EUR
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FCH47N60-F133 | ON Semiconductor |
 Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 10920 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60-F133 | ON Semiconductor |
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60-F133 | ONSEMI |
Description: ONSEMI - FCH47N60-F133 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.058 ohm, TO-247AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 417W Bauform - Transistor: TO-247AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.058ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60-F133 | onsemi |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH47N60-F133 | onsemi |
Description: MOSFET N-CH 600V 47A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 10920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 11.5 EUR |
| 120+ | 10.39 EUR |
| 510+ | 9.81 EUR |
| FCH47N60-F133 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 14.48 EUR |
| 100+ | 13.57 EUR |
| FCH47N60-F133 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.02 EUR |
| 7+ | 13.46 EUR |
| FCH47N60-F133 |
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Hersteller: ONSEMI
Description: ONSEMI - FCH47N60-F133 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.058 ohm, TO-247AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 417W
Bauform - Transistor: TO-247AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.058ohm
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - FCH47N60-F133 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.058 ohm, TO-247AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 417W
Bauform - Transistor: TO-247AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.058ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 1058 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 23.47 EUR |
| 13+ | 18.96 EUR |
| 15+ | 14.89 EUR |
| 50+ | 14.59 EUR |
| 100+ | 14.29 EUR |
| 250+ | 13.98 EUR |
| FCH47N60-F133 |
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Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.86 EUR |
| 10+ | 14.47 EUR |
| FCH47N60-F133 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.24 EUR |
| 30+ | 15.35 EUR |
| 120+ | 13.19 EUR |