FCP165N60E onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.07 EUR |
| 10+ | 4.14 EUR |
| 100+ | 3.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCP165N60E onsemi / Fairchild
Description: ONSEMI - FCP165N60E - Leistungs-MOSFET, n-Kanal, 600 V, 23 A, 0.165 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 23A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 3.5V, Verlustleistung: 227W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: SuperFET II, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.165ohm.
Weitere Produktangebote FCP165N60E nach Preis ab 3.08 EUR bis 12.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCP165N60E | onsemi |
 Description: MOSFET N-CH 600V 23A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | onsemi |
Description: MOSFET N-CH 600V 23A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | onsemi |
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive |
auf Bestellung 3168 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | ONSEMI |
Description: ONSEMI - FCP165N60E - Leistungs-MOSFET, n-Kanal, 600 V, 23 A, 0.165 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 23A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 227W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: SuperFET II productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.165ohm |
auf Bestellung 1229 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP165N60E | ON Semiconductor |
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 625 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP165N60E | ON Semiconductor |
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auf Bestellung 1540 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP165N60E |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| FCP165N60E |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.23 EUR |
| 10+ | 6.14 EUR |
| 100+ | 4.39 EUR |
| 800+ | 3.47 EUR |
| FCP165N60E |
|
Hersteller: onsemi
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 3168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.76 EUR |
| 10+ | 5.13 EUR |
| 100+ | 4.63 EUR |
| 500+ | 4.38 EUR |
| FCP165N60E |
|
Hersteller: ONSEMI
Description: ONSEMI - FCP165N60E - Leistungs-MOSFET, n-Kanal, 600 V, 23 A, 0.165 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 227W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperFET II
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.165ohm
Description: ONSEMI - FCP165N60E - Leistungs-MOSFET, n-Kanal, 600 V, 23 A, 0.165 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 227W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperFET II
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.165ohm
auf Bestellung 1229 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 12.02 EUR |
| 36+ | 6.59 EUR |
| 100+ | 4.88 EUR |
| 500+ | 4.5 EUR |
| 1000+ | 4.41 EUR |
| FCP165N60E |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 5 EUR |
| 42+ | 4.02 EUR |
| 44+ | 3.68 EUR |
| 50+ | 3.34 EUR |
| 100+ | 3.08 EUR |
| FCP165N60E |
|
Hersteller: ON Semiconductor
auf Bestellung 1540 Stücke:
Lieferzeit 21-28 Tag (e)