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FCP165N65S3R0

FCP165N65S3R0 ON Semiconductor

fcp165n65s3r0-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
158+3.51 EUR
500+3.24 EUR
1000+2.95 EUR
Mindestbestellmenge: 158
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Technische Details FCP165N65S3R0 ON Semiconductor

Description: FCP165N65S3R0 - POWER MOSFET, N-, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 440mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.

Weitere Produktangebote FCP165N65S3R0 nach Preis ab 3.15 EUR bis 6.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCP165N65S3R0 FCP165N65S3R0 Hersteller : onsemi fcp165n65s3r0-d.pdf Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 3527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.52 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 FCP165N65S3R0 Hersteller : Fairchild Semiconductor FCP165N65S3R0D.PDF Description: FCP165N65S3R0 - POWER MOSFET, N-
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 2115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.52 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 FCP165N65S3R0 Hersteller : onsemi FCP165N65S3R0_D-1805504.pdf MOSFETs SUPERFET3 650V TO220 PKG
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.65 EUR
50+5.28 EUR
100+4.61 EUR
800+3.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 Hersteller : ON Semiconductor fcp165n65s3r0-d.pdf FCP165N65S3R0D.PDF
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
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FCP165N65S3R0 Hersteller : ONSEMI FCP165N65S3R0D.PDF Description: ONSEMI - FCP165N65S3R0 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3527 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 FCP165N65S3R0 Hersteller : ON Semiconductor fcp165n65s3r0-d.pdf Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 FCP165N65S3R0 Hersteller : ON Semiconductor fcp165n65s3r0-d.pdf Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3R0 FCP165N65S3R0 Hersteller : onsemi fcp165n65s3r0-d.pdf Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH