FCP600N60Z Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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Technische Details FCP600N60Z Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote FCP600N60Z nach Preis ab 2.09 EUR bis 5.62 EUR
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FCP600N60Z | onsemi |
Description: MOSFET N-CH 600V 7.4A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 2593 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP600N60Z | onsemi / Fairchild |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FCP600N60Z |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 600V 7.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.65 EUR |
| 50+ | 3.72 EUR |
| 100+ | 3.07 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.2 EUR |
| 2000+ | 2.09 EUR |
| FCP600N60Z |
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Hersteller: onsemi / Fairchild
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.62 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.53 EUR |