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FCP600N60Z

FCP600N60Z Fairchild Semiconductor

ONSM-S-A0003584062-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
258+1.89 EUR
Mindestbestellmenge: 258
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCP600N60Z Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.

Weitere Produktangebote FCP600N60Z nach Preis ab 1.76 EUR bis 4.72 EUR

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FCP600N60Z FCP600N60Z onsemi fcpf600n60z-d.pdf Description: MOSFET N-CH 600V 7.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
50+3.13 EUR
100+2.58 EUR
500+2.18 EUR
1000+1.85 EUR
2000+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FCP600N60Z FCP600N60Z onsemi / Fairchild FCPF600N60Z-D.PDF MOSFETs 600V N-Channel MOSFET
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+2.36 EUR
100+2.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP600N60Z fcpf600n60z-d.pdf
FCP600N60Z
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.91 EUR
50+3.13 EUR
100+2.58 EUR
500+2.18 EUR
1000+1.85 EUR
2000+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FCP600N60Z FCPF600N60Z-D.PDF
FCP600N60Z
Hersteller: onsemi / Fairchild
MOSFETs 600V N-Channel MOSFET
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.72 EUR
10+2.36 EUR
100+2.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH