FCPF190N60E-F152 ON Semiconductor / Fairchild
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Technische Details FCPF190N60E-F152 ON Semiconductor / Fairchild
Description: MOSFET N-CH 600V TO-220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V.
Weitere Produktangebote FCPF190N60E-F152
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FCPF190N60E_F152 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 600V TO-220-3 |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF190N60E-F152 | Hersteller : onsemi |
Description: MOSFET N-CH 600V TO-220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V |
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