FCPF380N60E_F152 Fairchild Semiconductor
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FCPF380N60E_F152 Fairchild Semiconductor
Description: FCPF380N60E - Power MOSFET, N-C, Packaging: Bulk, Part Status: Obsolete, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Weitere Produktangebote FCPF380N60E_F152
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FCPF380N60E-F152 | Hersteller : ON Semiconductor / Fairchild | MOSFET 650V, 380mOhm SuperFET II MOSFET |
auf Bestellung 965 Stücke: Lieferzeit 14-28 Tag (e) |
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| FCPF380N60E-F152 | Hersteller : ONSEMI |
 Description: ONSEMI - FCPF380N60E-F152 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 201450 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF380N60E_F152 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220F Rail |
Produkt ist nicht verfügbar |
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| FCPF380N60E-F152 | Hersteller : Fairchild Semiconductor |
Description: FCPF380N60E - Power MOSFET, N-C Packaging: Bulk Part Status: Obsolete Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
Produkt ist nicht verfügbar |