Weitere Produktangebote FCPF650N80Z nach Preis ab 2.38 EUR bis 6.6 EUR
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FCPF650N80Z | onsemi |
MOSFETs N-Channel SuperFET II MOSFET |
auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF650N80Z | onsemi |
Description: MOSFET N-CH 800V 8A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V Power Dissipation (Max): 30.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 800µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF650N80Z | ON Semiconductor |
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auf Bestellung 780 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCPF650N80Z |
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Hersteller: onsemi
MOSFETs N-Channel SuperFET II MOSFET
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.38 EUR |
| FCPF650N80Z |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
Description: MOSFET N-CH 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.6 EUR |
| 50+ | 3.38 EUR |
| 100+ | 3.07 EUR |
| 500+ | 2.53 EUR |
| FCPF650N80Z |
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Hersteller: ON Semiconductor
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)



