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FCPF9N60NT

FCPF9N60NT Fairchild Semiconductor

FAIRS46032-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
217+2.32 EUR
Mindestbestellmenge: 217
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Technische Details FCPF9N60NT Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V, Power Dissipation (Max): 29.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V.

Weitere Produktangebote FCPF9N60NT nach Preis ab 3.78 EUR bis 5.21 EUR

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FCPF9N60NT FCPF9N60NT Hersteller : onsemi / Fairchild FCPF9N60NT_D-1773696.pdf MOSFET SupreMOS 9A
auf Bestellung 774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.21 EUR
10+4.70 EUR
25+4.44 EUR
100+3.78 EUR
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FCPF9N60NT FCPF9N60NT
Produktcode: 112124
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FAIRS46032-1.pdf?t.download=true&u=5oefqw fcpf9n60nt-d.pdf Transistoren > MOSFET N-CH
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FCPF9N60NT FCPF9N60NT Hersteller : ON Semiconductor fcp9n60n.pdf Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube
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FCPF9N60NT FCPF9N60NT Hersteller : onsemi fcpf9n60nt-d.pdf Description: MOSFET N-CH 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH