Weitere Produktangebote FCPF9N60NT nach Preis ab 2.35 EUR bis 5.21 EUR
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FCPF9N60NT | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 9Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF9N60NT | Hersteller : onsemi / Fairchild |
MOSFET SupreMOS 9A |
auf Bestellung 774 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF9N60NT | Hersteller : ONS/FAI |
MOSFET N-CH 600V 9A TO-220F Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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FCPF9N60NT | Hersteller : onsemi |
Description: MOSFET N-CH 600V 9A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
Produkt ist nicht verfügbar |